Festkörperprobleme - nouveau livre

EAN (ISBN-13): 9783540753506
Editeur: Springer Science+Business Media

Livre dans la base de données depuis 2017-01-03T09:17:24+01:00 (Zurich)
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ISBN/EAN: 9783540753506

ISBN - Autres types d'écriture:
978-3-540-75350-6
Autres types d'écriture et termes associés:
Auteur du livre: rössler

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Données de l'éditeur

Auteur: U. Rossler
Titre: Advances in Solid State Physics; Festkörperprobleme
Editeur: Springer; Springer Berlin
345 Pages
Date de parution: 2007-10-12
Berlin; Heidelberg; DE
Langue: Allemand
62,99 € (DE)
62,99 € (AT)
70,50 CHF (CH)
Available
VII, 345 S. 270 Abb.

EA; E107; eBook; Nonbooks, PBS / Physik, Astronomie/Atomphysik, Kernphysik; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Verstehen; Elektron; Halbleiter; Kristall; Materialwissenschaft; Mikroskopie; Rastertunnelmikroskopie; Supraleitung; B; Condensed Matter Physics; Physics and Astronomy; BB

Charge transfer between weakly coupled normal metals and superconductors at low temperatures.- Quantum effects and the onset of superconductivity in granular films.- Pattern formation in a liquid crystal.- X-ray absorption and reflection in materials sciences.- Propagation of large-wavevector acoustic phonons new perspectives from phonon imaging.- Theory of dynamical surface states and reconstructions at crystal surfaces.- Scanning tunneling microscopy and spectroscopy on clean and metal-covered Si surfaces.- Optical dephasing and orientational relaxation of wannier-excitons and free carriers in GaAs and GaAs/AlxGa1?xAs quantum wells.- The spectroscopic evidence for the identity of EL2 and the AsGa antisite in As-grown GaAs.- On the charge state of the EL2 mid gap level semi-insulating GaAs from a quantitative analysis of the compensation.- Deep donor levels (DX centers) in III–V semiconductors: Recent experimental results.- Chemical binding, stability and metastability of defects in semiconductors.- A new look at the reliability of thin film metallizations for microelectronic devices.- Quantum dot resonant tunneling spectroscopy.- DC and far infrared experiments on deep mesa etched single and multi-layered quantum wires.- Coherent electron focusing.- The size-induced metal-insulator transition and related electron interference phenomena in modern microelectronics.