The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - edition reliée, livre de poche
2016, ISBN: 366249681X
[EAN: 9783662496817], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CHEMIE; FESTKÖRPERPHYSIK; ELEKTRONIK / HALBLEITER; LEITUNG (PHYSIKALISCH) MASSENSPEKTROMETRIE - SPEKTROMETRIE; … Plus…
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2022, ISBN: 9783662496817
[ED: Buch], [PU: Springer Berlin Heidelberg], Neuware - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the … Plus…
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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - edition reliée, livre de poche
2016, ISBN: 9783662496817
[ED: Hardcover], [PU: Springer / Springer Berlin Heidelberg / Springer, Berlin], This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFE… Plus…
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ISBN: 9783662496817
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… Plus…
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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - edition reliée, livre de poche
2016, ISBN: 366249681X
[EAN: 9783662496817], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CHEMIE FESTKÖRPERPHYSIK ELEKTRONIK HALBLEITER LEITUNG (PHYSIKALISCH) MASSENSPEKTROMETRIE - SPEKTROMETRIE NANOTE… Plus…
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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - edition reliée, livre de poche
2016, ISBN: 366249681X
[EAN: 9783662496817], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CHEMIE; FESTKÖRPERPHYSIK; ELEKTRONIK / HALBLEITER; LEITUNG (PHYSIKALISCH) MASSENSPEKTROMETRIE - SPEKTROMETRIE; … Plus…
2022, ISBN: 9783662496817
[ED: Buch], [PU: Springer Berlin Heidelberg], Neuware - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the … Plus…
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - edition reliée, livre de poche
2016
ISBN: 9783662496817
[ED: Hardcover], [PU: Springer / Springer Berlin Heidelberg / Springer, Berlin], This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFE… Plus…
ISBN: 9783662496817
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… Plus…
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - edition reliée, livre de poche
2016, ISBN: 366249681X
[EAN: 9783662496817], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CHEMIE FESTKÖRPERPHYSIK ELEKTRONIK HALBLEITER LEITUNG (PHYSIKALISCH) MASSENSPEKTROMETRIE - SPEKTROMETRIE NANOTE… Plus…
Données bibliographiques du meilleur livre correspondant
Informations détaillées sur le livre - The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices Zhiqiang Li Author
EAN (ISBN-13): 9783662496817
ISBN (ISBN-10): 366249681X
Version reliée
Date de parution: 1
Editeur: Springer Berlin Heidelberg Core >2
Livre dans la base de données depuis 2016-03-08T20:29:30+01:00 (Zurich)
Page de détail modifiée en dernier sur 2024-02-27T15:13:41+01:00 (Zurich)
ISBN/EAN: 9783662496817
ISBN - Autres types d'écriture:
3-662-49681-X, 978-3-662-49681-7
Autres types d'écriture et termes associés:
Auteur du livre: schottky
Titre du livre: the source, mos, germanium, springer theses
Données de l'éditeur
Auteur: Zhiqiang Li
Titre: Springer Theses; The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Editeur: Springer; Springer Berlin
59 Pages
Date de parution: 2016-06-22
Berlin; Heidelberg; DE
Imprimé / Fabriqué en
Langue: Anglais
53,49 € (DE)
54,99 € (AT)
59,00 CHF (CH)
POD
XIV, 59 p. 52 illus., 49 illus. in color.
BB; Hardcover, Softcover / Physik, Astronomie/Atomphysik, Kernphysik; Elektronische Geräte und Materialien; Verstehen; Elektrotechnik, Elektronik; Contact resistance; Thermal stability; Germanium-based MOSFET; Dopant segregation; Source and drain; Nickel germanide; Dopant activation; MOS device; Semiconductors; Electronic Circuits and Systems; Nanophysics; Condensed Matter Physics; Schaltkreise und Komponenten (Bauteile); Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Nanowissenschaften; EA; BC
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.Nominated as an Excellent Doctoral Dissertation by Peking University in 2014 Proposes innovative methods for addressing the challenges in the source/drain engineering of germanium nMOSFETs Experimentally demonstrates the methods’ effectiveness with regard to reducing parasitic resistance in the source/drain of germanium nMOSFETs Includes supplementary material: sn.pub/extras
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