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ISBN: 9789048181087
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called "scaling", has highlighted serious advantages as integration density, s… Plus…
Rozeau, Olivier (Herausgeber); Amara, Amara (Herausgeber):
Planar Double-Gate Transistor From technology to circuit - Livres de poche2010, ISBN: 9048181089
Edition reliée
Softcover reprint of hardcover 1st ed. 2009 Kartoniert / Broschiert Spektroskopie, Spektrochemie, Massenspektrometrie, Technische Anwendung von elektronischen, magnetischen, optischen M… Plus…
2010
ISBN: 9048181089
Edition reliée
Softcover reprint of hardcover 1st ed. 2009 Kartoniert / Broschiert Spektroskopie, Spektrochemie, Massenspektrometrie, Technische Anwendung von elektronischen, magnetischen, optischen M… Plus…
ISBN: 9789048181087
Paperback, [PU: Springer], Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called "scaling", has highlighted serious advantages as integ… Plus…
2009, ISBN: 9048181089
Edition reliée
Planar Double-Gate Transistor ab 165.99 € als Taschenbuch: From technology to circuit. Softcover reprint of hardcover 1st ed. 2009. Aus dem Bereich: Bücher, Taschenbücher, Naturwissenscha… Plus…
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Informations détaillées sur le livre - Planar Double-Gate Transistor: From technology to circuit
EAN (ISBN-13): 9789048181087
ISBN (ISBN-10): 9048181089
Version reliée
Livre de poche
Date de parution: 2010
Editeur: Springer
220 Pages
Poids: 0,339 kg
Langue: eng/Englisch
Livre dans la base de données depuis 2011-09-23T09:14:23+02:00 (Zurich)
Page de détail modifiée en dernier sur 2024-04-15T13:00:01+02:00 (Zurich)
ISBN/EAN: 9789048181087
ISBN - Autres types d'écriture:
90-481-8108-9, 978-90-481-8108-7
Autres types d'écriture et termes associés:
Auteur du livre: olivier, roze
Titre du livre: gate, double, transistor circuit
Données de l'éditeur
Auteur: Amara Amara; Olivier Rozeau
Titre: Planar Double-Gate Transistor - From technology to circuit
Editeur: Springer; Springer Netherland
211 Pages
Date de parution: 2010-10-19
Dordrecht; NL
Imprimé / Fabriqué en
Langue: Anglais
160,49 € (DE)
164,99 € (AT)
177,00 CHF (CH)
POD
VIII, 211 p.
BC; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Schaltkreise und Komponenten (Bauteile); Verstehen; CMOS; Circuit Design; Compact modelling; Double-Gate MOSFET; Fully Depleted Silicon On Insulator; Leistungsfeldeffekttransistor; analog circuit design; analog design; digital design; field-effect transistor; integrated circuit; metal oxide semiconductur f; Electronic Circuits and Systems; Condensed Matter Physics; Spectroscopy; Optical Materials; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Spektroskopie, Spektrochemie, Massenspektrometrie; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; BB; EA
This book on Double-Gates devices and circuit is unique and aims to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary cells. The goal is to point out how we can take advantage of new transistor structures to come up with new basic cells and concepts that exploit the electrical features of these new devices and the breakthrough they bring. Planar Double-Gate Transistor will mainly focus on SOI CMOS transistors, fully depleted with double independent planar Gates (Independent Planar Double Gates Transistors: IPDGT), a potential candidate for the sub-32 nm technological nodes as planned by the current ITRS Roadmap. The book topics are mainly focusing on: Detailed description of specific processes that allow the optimization of the CMOS IPDGT device CMOS IPDGT modeling, both compact and physical models are presented Device characterization Design of innovating cells (SRAM cells, basic digital & analog functions) with the objectives to improve the level of integration and the robustness to variability as well as the power consumption optimization, using the degree of freedom introduced by the independent gates.First book dealing with Technology and Design Interaction Presents a cross-disciplinary based approach to optimize a new and complex technology Covers all aspects of IC Design with advanced technologies: process, device modelling, characterization, and circuit design of analogue, digital and memory circuits Introduces new circuit concepts taking benefit of the double-gate device structures
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