ISBN: 9781402006746
Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation… Plus…
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2002, ISBN: 9781402006746
Erscheinungsdatum: 31.07.2002, Medium: Buch, Einband: Gebunden, Titel: Atomistic Aspects of Epitaxial Growth, Auflage: 2002, Redaktion: Kotrla, Miroslav // Papanicolaou, Nicolas I. // Vve… Plus…
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2002, ISBN: 1402006748
2002 Gebundene Ausgabe Physikalische Chemie, Materialwissenschaft, Werkstoffprüfung, Elektronik, Epitaxy; Experiment; PES; Ramanspectroscopy; Stem; STM; crystal; electronmicroscopy; mic… Plus…
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2002, ISBN: 9781402006746
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2002, ISBN: 9781402006746
2002 ed., Hardcover, Buch, [PU: Springer-Verlag New York Inc.]
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ISBN: 9781402006746
Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation… Plus…
2002, ISBN: 9781402006746
Erscheinungsdatum: 31.07.2002, Medium: Buch, Einband: Gebunden, Titel: Atomistic Aspects of Epitaxial Growth, Auflage: 2002, Redaktion: Kotrla, Miroslav // Papanicolaou, Nicolas I. // Vve… Plus…
2002
ISBN: 1402006748
2002 Gebundene Ausgabe Physikalische Chemie, Materialwissenschaft, Werkstoffprüfung, Elektronik, Epitaxy; Experiment; PES; Ramanspectroscopy; Stem; STM; crystal; electronmicroscopy; mic… Plus…
2002, ISBN: 9781402006746
Buch, Hardcover, 2002 ed. [PU: Springer-Verlag New York Inc.], Springer-Verlag New York Inc., 2002
2002, ISBN: 9781402006746
2002 ed., Hardcover, Buch, [PU: Springer-Verlag New York Inc.]
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Informations détaillées sur le livre - Atomistic Aspects of Epitaxial Growth
EAN (ISBN-13): 9781402006746
ISBN (ISBN-10): 1402006748
Version reliée
Date de parution: 2002
Editeur: Springer-Verlag New York Inc.
Livre dans la base de données depuis 2007-06-06T21:30:14+02:00 (Zurich)
Page de détail modifiée en dernier sur 2022-06-22T19:37:33+02:00 (Zurich)
ISBN/EAN: 1402006748
ISBN - Autres types d'écriture:
1-4020-0674-8, 978-1-4020-0674-6
Autres types d'écriture et termes associés:
Auteur du livre: papanicolaou, wille, vedensky, vvedensky, luc, nicolas, papan
Titre du livre: the mathematics physics and chemistry, aspects the novel
Données de l'éditeur
Auteur: Miroslav Kotrla; Nicolas I. Papanicolaou; Dimitri Vvedensky; Luc T. Wille
Titre: NATO Science Series II: Mathematics, Physics and Chemistry; Atomistic Aspects of Epitaxial Growth
Editeur: Springer; Springer Netherland
604 Pages
Date de parution: 2002-07-31
Dordrecht; NL
Langue: Anglais
106,99 € (DE)
109,99 € (AT)
118,00 CHF (CH)
Available
XII, 604 p.
BB; Hardcover, Softcover / Physik, Astronomie/Allgemeines, Lexika; Mathematik und Naturwissenschaften; Verstehen; Epitaxy; Experiment; PES; Raman spectroscopy; STEM; STM; crystal; electron microscopy; microscopy; modeling; spectroscopy; thermodynamics; Physics and Astronomy; Electronics and Microelectronics, Instrumentation; Surfaces, Interfaces and Thin Film; Characterization and Analytical Technique; Physical Chemistry; Condensed Matter Physics; Elektronik; Materialwissenschaft; Werkstoffprüfung; Physikalische Chemie; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); BC; EA
Experimental Study of Surface Diffusion in Metal Overlayers on Anisotropic Metal Surfaces.- Ab Initio Modeling of Free Energy Profiles in Thermally-Activated Processes.- Surface Diffusion with a Realistic Damping Coefficient.- Vibrational and Structural Properties of the Nb(001) Surface with and without a Nb Adatom by Tight-Binding Molecular Dynamics.- Adatoms and Vacancies on A3B (001) Surfaces.- Long-Time-Scale Simulations of Al(100) Crystal Growth.- Diffusion of Dimers on Silicon and Germanium (001) Surfaces.- Island Nucleation in Metal Thin-Film Growth.- Capture-Numbers and Island Size-Distributions in Irreversible Homoepitaxial Growth: A Rate Equation Approach.- Island Statistics Reflecting Growth Processes.- Growth of an Anisotropic Surface: The Case of Ag/Ag(110.- Vibrational Properties of 2D Copper Islands on the Cu(111) Surface by MD Simulations.- Irreversible Nucleation in Multilayer Growth.- Second Layer Nucleation and the Shape of Wedding Cakes.- Steering Epitaxial Growth.- Coarsening Mechanisms in Surface Morphological Evolution.- Realistic Atomistic Modeling of Mound Formation during Multilayer Growth: Metal(100) Homoepitaxy.- Patterning Surfaces by Self-Organized Growth.- Growth and Ion Erosion: Two Methods for Patterning Surfaces.- Oscillatory Driving of Crystal Surfaces: A Route to Controlled Pattern Formation.- Reconstruction-Determined Growth of Silver on Silicon(111)—(7×7.- Electromigration of Si Adatoms on Si Surfaces: A Key to Understanding Step Bunching Instabilities during Sublimation and MBE Growth.- Atomic Steps on a Single-Crystal Surface Studied with in situ UHV Reflection-Electron Microscopy.- Mechanisms and Anomalies in the Formation of InAs-GaAs(001) Quantum Dot Structures.- Ab initio Study of Stability of Surfaces and Nanostructures.-Atomistic and Continuum Elastic Effects in Heteroepitaxial Systems.- An Initio Thermodynamics and Statistical Mechanics of Diffusion, Growth, and Self-Assembly of Quantum Dots.- Atomistic Aspects of SiGe Nanostructure Formation by Molecular-Beam Epitaxy.- Stress-Induced Surface Modulation.- Entropy Effects in the Self-Organized Formation of Nanostructures.- Dislocation-Free 3D Islands in Highly Mismatched Epitaxy: An Equilibrium Study with Anharmonic Interactions.- Self-Assembly of Few-Atom Clusters in a Model of a Strained Submonolayer.- Ab initio Study of the Influence of Epitaxial Strain on Magnetoelastic Properties.- Strain Characterization of Epitaxially-Grown Superlattices by Raman Spectroscopy.- Effect of Annealing at High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen.- Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on GaAs and Si Substrates.- Atomic View of Surfactant Action in Epitaxial Growth: From STM to Computer Simulation.- Effects of Atomic Interactions in Two-Component Submonolayer Growth.- Ultrathin Ionic Films Epitaxially Grown on III-V Semiconductors Studied with Atomic Resolution.- Ultraviolet-Assisted Pulsed Laser Deposition of Thin Oxide Films.- Atomistic Theory of the Growth Mode for a Thin Metallic Film on an Insulating Substrate.- Structure and Formation Mechanism of Nanogranular CoCu Films.- Photoemission Studies of Bimetallic Ultrathin Films: Au-Ni on Yttria- Stabilized ZrO2(100.- Ab-initio Calculations on the Structural and Electronic Properties of BaO/BaTiO3 and SrO/SrTiO3 Interfaces.- Atomic Ordering and its Influence on the Optical and Electrical Properties of InGaP Grown by MOVPE.- Nanoscopic Study of Zirconia Films Grown by Atomic Layer Deposition.Autres livres qui pourraient ressembler au livre recherché:
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